GATE外部结构有()、()、()、()、()、()、()、()等部分组成。
GATE外部结构有()、()、()、()、()、()、()、()等部分组成。
相关考题:
要使8254通道2工作于方式3输出非对称的周期性方波,必须有()。A、GATE为高电平,计数初值为奇数B、计数初值为偶数,GATE为高电平C、GATE为低电平,计数初值为奇数D、计数初值为偶数,GATE为低电平
要使8254通道2工作于方式4输出对称的周期性方波,必须有()。A、GATE为高电平,计数初值为奇数B、计数初值为偶数,GATE为高电平C、GATE为低电平,计数初值为奇数D、计数初值为偶数,GATE为低电平
若定时器T1受外部输入引脚电平(高电平起作用)的影响,则要启动定时器T1运行软件,必须满足()A、GATE=0,TR1=0B、GATE=0,TR1=1C、GATE=1,TR1=0D、GATE=1,TR1=1
在SCR(Silicon Controlled Rectifier)、GTO(Gate Turn-Off Thyristor)、GTR(Giant Transistor)、MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)、IGBT(Insulated Gate Bipolar Transistor)中半控型器件有(),全控型器件有(),电流驱动器件有()。
单选题Unlike the globe valve, gate valves give full bore flow without change of direction, such a valve is not suitable to partially open operationAccording to the above sentence, which of the following statements is not true?()AThe globe valve may be suitable for partially open operationBThe globe valve will give full bore flow with change of directionCThe gate valve gives full bore flow with change of directionDThe gate valve is suitable for full bore operation only
填空题在SCR(Silicon Controlled Rectifier)、GTO(Gate Turn-Off Thyristor)、GTR(Giant Transistor)、MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)、IGBT(Insulated Gate Bipolar Transistor)中半控型器件有(),全控型器件有(),电流驱动器件有()。